A photoresistor or light dependent resistor (LDR) is a resistor whose resistance decreases with increasing incident light intensity; in other words, it exhibits photoconductivity. It can also be referred to as a photoconductor or CdS device, from "cadmium sulfide," which is the material from which the device is made and that actually exhibits the variation in resistance with light level. Note that CdS is not a semiconductor in the usual sense of the word (not doped silicon).

A photoresistor is made of a high resistance semiconductor. If light falling on the device is of high enough frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electron (and its hole partner) conduct electricity, thereby lowering resistance.

A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, e.g. silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap. Extrinsic devices have impurities, also called dopants, added whose ground state energy is closer to the conduction band; since the electrons do not have as far to jump, lower energy photons (i.e., longer wavelengths and lower frequencies) are sufficient to trigger the device. If a sample of silicon has some of its atoms replaced by phosphorus atoms (impurities), there will be extra electrons available for conduction. This is an example of an extrinsic semiconductor. Photoresistors are basically photocells.